TYPE | DESCRIPTION |
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 20V |
Drain-Source On Resistance-Max: | 150mΩ |
Rated Power Dissipation: | 1.5W |
Qg Gate Charge: | 5.5nC |
Gate-Source Voltage-Max [Vgss]: | 8V |
Drain Current: | 3A |
Turn-on Delay Time: | 5ns |
Turn-off Delay Time: | 30ns |
Rise Time: | 10ns |
Fall Time: | 20ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 1.2V |
Technology: | Si |
Height - Max: | 1mm |
Length: | 3mm |
Input Capacitance: | 476pF |
3000
0.8433
2529.9
9000
0.7031
6327.9
15000
0.6995
10492.5
45000
0.6824
30708
75000
0.6788
50910