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FDI150N10

  • FDI150N10
  • FDI150N10
FDI150N10
Mosfets
onsemi
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:100V
Drain-Source On Resistance-Max:16mΩ
Rated Power Dissipation:110W
Qg Gate Charge:53nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:57A
Turn-on Delay Time:47ns
Turn-off Delay Time:86ns
Rise Time:164ns
Fall Time:83ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:4.5V
Technology:PowerTrench
Input Capacitance:3580pF
Package Style: I2PAK
Mounting Method:Through Hole
PDF(1)

50

27.7435

1387.175

200

21.5625

4312.5

500

20.5594

10279.7

1250

19.6981

24622.625

2000

19.2623

38524.6

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