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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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FDP047N10
FDP047N10
:
FDP047N10
:
Mosfets
:
onsemi
:
FDP047N10 Serie
:
-
:
Tube
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
100V
Drain-Source On Resistance-Max:
4.7mΩ
Rated Power Dissipation:
375|W
Qg Gate Charge:
210nC
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Flange Mount
PDF(1)
50
37.8154
1890.77
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