FQB33N10TM Mosfets_Inventory of electronic components_Electronic equipment_Power management

FQB33N10TM


：	FQB33N10TM
：	Mosfets
：	onsemi
：	N-Channel 100 V
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	52mΩ
Rated Power Dissipation:	3.75\|W
Qg Gate Charge:	51nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

PDF(1)

800

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13068.48

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14.7577

35418.48

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44926.72

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13.3215

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