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晶体管
/
离散器
/
金属氧化物半导体场效应晶体管
/
FQT7N10LTF
FQT7N10LTF
:
FQT7N10LTF
:
Mosfets
:
onsemi
:
N-Channel 100 V
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
100V
Drain-Source On Resistance-Max:
0.35Ω
Rated Power Dissipation:
2|W
Qg Gate Charge:
4.6nC
Package Style:
SOT-223 (TO-261-4, SC-73)
Mounting Method:
Surface Mount
PDF(1)
4000
8.097
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