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IPD30N06S215ATMA2

  • IPD30N06S215ATMA2
  • IPD30N06S215ATMA2
IPD30N06S215ATMA2
Mosfets
Infineon
N-Channel 55 V
-
Reel
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:55V
Drain-Source On Resistance-Max:14.7mΩ
Rated Power Dissipation:136W
Qg Gate Charge:41nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:30A
Turn-on Delay Time:13ns
Turn-off Delay Time:32ns
Rise Time:28ns
Fall Time:19ns
Operating Temp Range:-55°C to +175°C
Gate Source Threshold:3V
Technology:OptiMOS
Input Capacitance:1485pF
Package Style: TO-252-3 (DPAK)
Mounting Method:Surface Mount
PDF(1)

2500

14.3228

35807

5000

11.4602

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