TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 40V |
Drain-Source On Resistance-Max: | 1.6mΩ |
Rated Power Dissipation: | 294|W |
Qg Gate Charge: | 216nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 320A |
Turn-on Delay Time: | 24ns |
Turn-off Delay Time: | 115ns |
Rise Time: | 68ns |
Fall Time: | 68ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 3V |
Technology: | Si |
Input Capacitance: | 10820pF |
Package Style: | TO-263-3 (D2PAK) |
Mounting Method: | Surface Mount |
800
38.8226
31058.08
1600
31.06
49696