TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 80V |
Drain-Source On Resistance-Max: | 30mΩ |
Rated Power Dissipation: | 120W |
Qg Gate Charge: | 33nC |
Gate-Source Voltage-Max [Vgss]: | 16V |
Drain Current: | 39A |
Turn-on Delay Time: | 12ns |
Turn-off Delay Time: | 36ns |
Rise Time: | 95ns |
Fall Time: | 55ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 2.5V |
Technology: | Advanced Process Technology |
Height - Max: | 2.39mm |
Length: | 6.73mm |
Input Capacitance: | 1890pF |
Package Style: | TO-252AA |
Mounting Method: | Surface Mount |
2000
16.6802
33360.4
4000
13.3006
53202.4