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IXFN360N10T

  • IXFN360N10T
  • IXFN360N10T
  • IXFN360N10T
  • IXFN360N10T
IXFN360N10T
Mosfets
IXYS
Single N-Channe
-
Tube
0
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:100V
Drain-Source On Resistance-Max:2.6mΩ
Rated Power Dissipation:830|W
Qg Gate Charge:5.5nC
Package Style: SOT-227B
Mounting Method:Chassis Mount
: 0

10

386.4427

3864.427

30

334.8365

10045.095

50

327.6423

16382.115

100

318.2999

31829.99

200

309.0993

61819.86

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