IXFP5N100P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXFP5N100P


：	IXFP5N100P
：	Mosfets
：	IXYS
：	N-Channel 1000
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	1000V
Drain-Source On Resistance-Max:	2.8Ω
Rated Power Dissipation:	250\|W
Qg Gate Charge:	33.4nC
Package Style:	TO-220-3 (TO-220AB)
Mounting Method:	Through Hole

PDF(1)

54.6357

2731.785

150

46.7221

7008.315

250

46.0027

11500.675

750

44.422

33316.5

1250

43.7025

54628.125

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