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IXFP6N120P

  • IXFP6N120P
  • IXFP6N120P
  • IXFP6N120P
  • IXFP6N120P
IXFP6N120P
Mosfets
IXYS
N-Channel 1200
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:1200V
Drain-Source On Resistance-Max:2.4Ω
Rated Power Dissipation:250|W
Qg Gate Charge:92nC
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
PDF(1)

50

111.4197

5570.985

100

95.4606

9546.06

200

93.1604

18632.08

250

92.4411

23110.275

750

89.1378

66853.35

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