IXFR200N10P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXFR200N10P


：	IXFR200N10P
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	9mΩ
Rated Power Dissipation:	300\|W
Qg Gate Charge:	235nC
Package Style:	ISOPLUS-247
Mounting Method:	Through Hole

PDF(1)

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