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IXFR36N60P

  • IXFR36N60P
  • IXFR36N60P
IXFR36N60P
Mosfets
IXYS
Single N-Channe
-
Tube
0
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:200mΩ
Rated Power Dissipation:208W
Qg Gate Charge:102nC
Gate-Source Voltage-Max [Vgss]:30V
Drain Current:20A
Turn-on Delay Time:30ns
Turn-off Delay Time:80ns
Rise Time:25ns
Fall Time:22ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:5V
Technology:Si
Height - Max:21.34mm
Length:16.13mm
Input Capacitance:5800pF
Package Style: ISOPLUS-247
Mounting Method:Through Hole
: 0

30

188.0435

5641.305

60

161.8808

9712.848

120

157.858

18942.96

150

156.5611

23484.165

450

150.3801

67671.045

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