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IXFX24N100Q3

  • IXFX24N100Q3
  • IXFX24N100Q3
IXFX24N100Q3
Mosfets
IXYS
N Channel 1000
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:1000V
Drain-Source On Resistance-Max:440mΩ
Rated Power Dissipation:1000|W
Qg Gate Charge:140nC
Package Style: PLUS-247
Mounting Method:Through Hole
PDF(1)

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