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IXFX26N120P

  • IXFX26N120P
  • IXFX26N120P
IXFX26N120P
Mosfets
IXYS
Single N-Channe
-
Tube
0
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TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:1200V
Drain-Source On Resistance-Max:0.5Ω
Rated Power Dissipation:960|W
Qg Gate Charge:255nC
Package Style: PLUS-247
Mounting Method:Through Hole
: 0

30

503.7595

15112.785

60

416.2025

24972.15

90

408.4408

36759.672

120

402.9792

48357.504

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