IXFX26N120P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXFX26N120P


：	IXFX26N120P
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	0
：	-
：

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	1200V
Drain-Source On Resistance-Max:	0.5Ω
Rated Power Dissipation:	960\|W
Qg Gate Charge:	255nC
Package Style:	PLUS-247
Mounting Method:	Through Hole

: 0

503.7595

15112.785

416.2025

24972.15

408.4408

36759.672

120

402.9792

48357.504

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