IXTA05N100 Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTA05N100


：	IXTA05N100
：	Mosfets
：	IXYS
：	N-Channel 1 kV
：	-
：	Tube
：	0
：	-
：

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	1000V
Drain-Source On Resistance-Max:	17mΩ
Rated Power Dissipation:	40\|W
Qg Gate Charge:	7.8nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

: 0

51.8999

2594.995

150

47.7353

7160.295

250

47.4415

11860.375

750

46.5802

34935.15

1250

46.1446

57680.75

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