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IXTA180N10T

  • IXTA180N10T
  • IXTA180N10T
IXTA180N10T
Mosfets
IXYS
Single N-Channe
-
Tube
0
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:100V
Drain-Source On Resistance-Max:6.4mΩ
Rated Power Dissipation:480|W
Qg Gate Charge:151nC
Mounting Method:Surface Mount
: 0

50

60.0973

3004.865

150

51.3224

7698.36

250

50.4611

12615.275

750

48.7385

36553.875

1250

48.0191

60023.875

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