IXTA180N10T7 Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTA180N10T7


：	IXTA180N10T7
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	6.4mΩ
Rated Power Dissipation:	480\|W
Qg Gate Charge:	151nC
Mounting Method:	Surface Mount

PDF(1)

64.8395

3241.975

150

59.6617

8949.255

250

59.2359

14808.975

750

58.0809

43560.675

1250

57.6553

72069.125

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IXTA180N10T7

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