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IXTA26P20P

  • IXTA26P20P
  • IXTA26P20P
IXTA26P20P
Mosfets
IXYS
Single P-Channe
-
Tube
-
TYPEDESCRIPTION
Fet Type:P-Ch
Drain-to-Source Voltage [Vdss]:200V
Drain-Source On Resistance-Max:170mΩ
Rated Power Dissipation:300|W
Qg Gate Charge:56nC
Package Style: TO-263-3 (D2PAK)
Mounting Method:Surface Mount
PDF(1)

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121.6233

6081.165

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101.0641

10106.41

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98.1964

19639.28

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97.325

24331.25

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