IXTA2R4N120P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTA2R4N120P


：	IXTA2R4N120P
：	Mosfets
：	IXYS
：	N-Channel 1200
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	1200V
Drain-Source On Resistance-Max:	7.5Ω
Rated Power Dissipation:	125\|W
Qg Gate Charge:	37nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

PDF(1)

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