IXTA36N30P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTA36N30P


：	IXTA36N30P
：	Mosfets
：	IXYS
：	N-Channel 300 V
：	-
：	Tube
：	0
：	-
：

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	300V
Drain-Source On Resistance-Max:	110mΩ
Rated Power Dissipation:	300\|W
Qg Gate Charge:	70nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Through Hole

: 0

50.1774

2508.87

150

42.8413

6426.195

250

42.1218

10530.45

750

40.8249

30618.675

1250

40.1155

50144.375

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