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IXTA36N30P

  • IXTA36N30P
  • IXTA36N30P
IXTA36N30P
Mosfets
IXYS
N-Channel 300 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:300V
Drain-Source On Resistance-Max:110mΩ
Rated Power Dissipation:300|W
Qg Gate Charge:70nC
Package Style: TO-263-3 (D2PAK)
Mounting Method:Through Hole
PDF(1)

50

50.1774

2508.87

150

42.8413

6426.195

250

42.1218

10530.45

750

40.8249

30618.675

1250

40.1155

50144.375

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