IXTA3N120 Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTA3N120


：	IXTA3N120
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	0
：	-
：

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	1200V
Drain-Source On Resistance-Max:	4.5Ω
Rated Power Dissipation:	200\|W
Qg Gate Charge:	42nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

: 0

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