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IXTA60N10T

  • IXTA60N10T
  • IXTA60N10T
IXTA60N10T
Mosfets
IXYS
N-Channel 100 V
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Tube
0
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TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:100V
Drain-Source On Resistance-Max:18mΩ
Rated Power Dissipation:176|W
Qg Gate Charge:49nC
Package Style: TO-263-3 (D2PAK)
Mounting Method:Through Hole
: 0

50

25.1596

1257.98

200

21.5625

4312.5

500

20.985

10492.5

1250

20.4174

25521.75

2000

20.1237

40247.4

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