IXTA60N10T Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTA60N10T


：	IXTA60N10T
：	Mosfets
：	IXYS
：	N-Channel 100 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	18mΩ
Rated Power Dissipation:	176\|W
Qg Gate Charge:	49nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Through Hole

PDF(1)

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