IXTA6N100D2 Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTA6N100D2


：	IXTA6N100D2
：	Mosfets
：	IXYS
：	N-Channel 1000
：	-
：	Tube
：	0
：	-
：

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	1000V
Drain-Source On Resistance-Max:	2.2Ω
Rated Power Dissipation:	300\|W
Qg Gate Charge:	95nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

: 0

82.8049

75.185

1127.775

72.0236

3601.18

150

69.156

10373.4

500

66.2783

33139.15

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