IXTA76P10T Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTA76P10T


：	IXTA76P10T
：	Mosfets
：	IXYS
：	P-Channel 100 V
：	-
：	Tube
：	0
：	-
：

TYPE	DESCRIPTION
Fet Type:	P-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	25mΩ
Rated Power Dissipation:	298\|W
Qg Gate Charge:	197nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

: 0

70.7366

3536.83

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60.2391

9035.865

250

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14808.975

500

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28969.5

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