IXTH110N25T Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTH110N25T


：	IXTH110N25T
：	Mosfets
：	IXYS
：	N-Channel 250 V
：	-
：	Tube
：	0
：	-
：

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	250V
Drain-Source On Resistance-Max:	24mΩ
Rated Power Dissipation:	694\|W
Qg Gate Charge:	157nC
Package Style:	TO-247-3

: 0

110.8421

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94.7412

8526.708

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13974.06

300

90.8603

27258.09

600

88.702

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