IXTH110N25T Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTH110N25T


：	IXTH110N25T
：	Mosfets
：	IXYS
：	N-Channel 250 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	250V
Drain-Source On Resistance-Max:	24mΩ
Rated Power Dissipation:	694\|W
Qg Gate Charge:	157nC
Package Style:	TO-247-3

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