IXTH200N10T Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTH200N10T


：	IXTH200N10T
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	5.5mΩ
Rated Power Dissipation:	550\|W
Qg Gate Charge:	152nC
Mounting Method:	Through Hole

PDF(1)

102.361

3070.83

87.557

7880.13

150

85.9763

12896.445

300

83.96

25188

600

81.9436

49166.16

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