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IXTH2N170D2

  • IXTH2N170D2
  • IXTH2N170D2
IXTH2N170D2
Mosfets
IXYS
Single N-Channe
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:1700V
Drain-Source On Resistance-Max:6.5Ω
Rated Power Dissipation:568|W
Qg Gate Charge:110nC
Package Style: TO-247-3
Mounting Method:Through Hole
PDF(1)

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