IXTH30N60P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTH30N60P


：	IXTH30N60P
：	Mosfets
：	IXYS
：	N-Channel 600 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	240mΩ
Rated Power Dissipation:	540\|W
Qg Gate Charge:	82nC
Package Style:	TO-247-3
Mounting Method:	Through Hole

PDF(1)

117.8844

3536.532

100.7803

9070.227

150

99.0577

14858.655

300

96.6157

28984.71

600

94.3155

56589.3

TE CONNECTIVITY

WP-4S

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IXTH30N60P

N-Channel 600 V 30 A 0.24 Ω Through Hole PolarHV Power Mosfet - TO-247

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