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IXTH60N20L2

  • IXTH60N20L2
  • IXTH60N20L2
IXTH60N20L2
Mosfets
IXYS
N-Channel 200 V
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Tube
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TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:200V
Drain-Source On Resistance-Max:45mΩ
Rated Power Dissipation:540|W
Qg Gate Charge:255nC
Package Style: TO-247-3
Mounting Method:Through Hole
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30

245.6987

7370.961

60

209.3223

12559.338

90

206.0189

18541.701

150

201.9962

30299.43

300

196.5246

58957.38

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