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IXTH80N20L

  • IXTH80N20L
  • IXTH80N20L
IXTH80N20L
Mosfets
IXYS
IXTH80N20L Seri
-
Tube
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TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:200V
Drain-Source On Resistance-Max:32mΩ
Rated Power Dissipation:520|W
Qg Gate Charge:180nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:80A
Turn-on Delay Time:29ns
Turn-off Delay Time:72ns
Operating Temp Range:-55°C to +150°C
Technology:PowerTrench
Input Capacitance:616pF
Package Style: TO-247-3
Mounting Method:Through Hole
PDF(1)

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184.7402

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