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IXTK120P20T

  • IXTK120P20T
  • IXTK120P20T
IXTK120P20T
Mosfets
IXYS
N-Channel 200 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:P-Ch
Drain-to-Source Voltage [Vdss]:200V
Drain-Source On Resistance-Max:30mΩ
Rated Power Dissipation:1040|W
Qg Gate Charge:740nC
Package Style: TO-264
Mounting Method:Through Hole
PDF(1)

25

686.3414

17158.535

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567.7376

28386.88

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556.8044

41760.33

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549.0428

54904.28

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