IXTK200N10L2 Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTK200N10L2


：	IXTK200N10L2
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	0
：	-
：

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	11mΩ
Rated Power Dissipation:	1040\|W
Qg Gate Charge:	115nC
Package Style:	TO-264
Mounting Method:	Through Hole

: 0

478.7417

448.9819

1795.9276

416.78

8335.6

403.6986

16147.944

125

382.9974

47874.675

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