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IXTK200N10P

  • IXTK200N10P
  • IXTK200N10P
IXTK200N10P
Mosfets
IXYS
N-channel 100 V
-
Tube
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TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:100V
Drain-Source On Resistance-Max:7.5mΩ
Rated Power Dissipation:800|mW
Qg Gate Charge:240nC
Package Style: TO-264
Mounting Method:Through Hole
PDF(1)

25

194.9439

4873.5975

75

165.7615

12432.1125

100

163.897

16389.7

250

158.4355

39608.875

375

155.9835

58493.8125

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