IXTN200N10L2 Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTN200N10L2


：	IXTN200N10L2
：	Mosfets
：	IXYS
：	N-Channel 100 V
：	-
：	Tube
：	0
：	-
：

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	11mΩ
Rated Power Dissipation:	830\|W
Qg Gate Charge:	540nC
Package Style:	SOT-227
Mounting Method:	Chassis Mount

: 0

723.863

7238.63

626.1023

12522.046

613.8821

18416.463

598.9363

29946.815

100

579.0963

57909.63

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