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IXTP02N120P

  • IXTP02N120P
  • IXTP02N120P
IXTP02N120P
Mosfets
IXYS
N-Channel 1200
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:1200V
Drain-Source On Resistance-Max:75Ω
Rated Power Dissipation:33W
Qg Gate Charge:4.7nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:0.2A
Turn-on Delay Time:6ns
Turn-off Delay Time:21ns
Rise Time:10ns
Fall Time:39ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:4V
Input Capacitance:104pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
PDF(1)

50

31.7762

1588.81

200

20.7013

4140.26

750

18.543

13907.25

1250

17.8236

22279.5

2500

16.8204

42051

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