IXTP06N120P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTP06N120P


：	IXTP06N120P
：	Mosfets
：	IXYS
：	N-Channel 1200
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	1200V
Drain-Source On Resistance-Max:	34Ω
Rated Power Dissipation:	42\|W
Qg Gate Charge:	13.3nC
Package Style:	TO-220-3 (TO-220AB)
Mounting Method:	Through Hole

48.5966

2429.83

150

41.5443

6231.645

250

40.8249

10206.225

750

39.396

29547

1250

38.8185

48523.125

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