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IXTP160N10T

  • IXTP160N10T
  • IXTP160N10T
IXTP160N10T
Mosfets
IXYS
N-Channel 100 V
-
Tube
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TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:100V
Drain-Source On Resistance-Max:7mΩ
Rated Power Dissipation:430|W
Qg Gate Charge:132nC
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
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49422.5

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