IXTP160N10T Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTP160N10T


：	IXTP160N10T
：	Mosfets
：	IXYS
：	N-Channel 100 V
：	-
：	Tube
：	0
：	-
：

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	7mΩ
Rated Power Dissipation:	430\|W
Qg Gate Charge:	132nC
Package Style:	TO-220-3 (TO-220AB)
Mounting Method:	Through Hole

: 0

49.4579

2472.895

150

42.2637

6339.555

250

41.5443

10386.075

750

40.1155

30086.625

1250

39.538

49422.5

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