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IXTP180N10T

  • IXTP180N10T
  • IXTP180N10T
IXTP180N10T
Mosfets
IXYS
N-Channel 100 V
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Tube
0
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TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:100V
Drain-Source On Resistance-Max:6.4mΩ
Rated Power Dissipation:480W
Qg Gate Charge:151nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:180A
Turn-on Delay Time:33ns
Turn-off Delay Time:42ns
Rise Time:54ns
Fall Time:31ns
Operating Temp Range:-55°C to +175°C
Gate Source Threshold:4.5V
Input Capacitance:6900pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
: 0

50

72.0236

3601.18

150

61.2423

9186.345

250

60.2391

15059.775

500

58.9422

29471.1

1000

57.6553

57655.3

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