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IXTP60N10T

  • IXTP60N10T
  • IXTP60N10T
  • IXTP60N10T
  • IXTP60N10T
IXTP60N10T
Mosfets
IXYS
Single N-Channe
-
Tube
0
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:100V
Drain-Source On Resistance-Max:18mΩ
Rated Power Dissipation:176|W
Qg Gate Charge:49nC
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
: 0

50

24.582

1229.1

200

21.1369

4227.38

500

20.5594

10279.7

1250

19.9818

24977.25

2000

19.6981

39396.2

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