IXTP60N10T Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTP60N10T


：	IXTP60N10T
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	18mΩ
Rated Power Dissipation:	176\|W
Qg Gate Charge:	49nC
Package Style:	TO-220-3 (TO-220AB)
Mounting Method:	Through Hole

PDF(1)

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4227.38

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10279.7

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