IXTQ200N10T Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTQ200N10T


：	IXTQ200N10T
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	0
：	-
：

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	5.5mΩ
Rated Power Dissipation:	550\|W
Qg Gate Charge:	152nC
Package Style:	TO-3P
Mounting Method:	Flange Mount

: 0

81.376

2441.28

69.8753

6288.777

150

68.7202

10308.03

450

66.2783

29825.235

750

65.1232

48842.4

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