IXTQ82N25P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTQ82N25P


：	IXTQ82N25P
：	Mosfets
：	IXYS
：	N-channel 250 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	250V
Drain-Source On Resistance-Max:	35mΩ
Rated Power Dissipation:	500\|W
Qg Gate Charge:	142nC
Package Style:	TO-3P
Mounting Method:	Through Hole

PDF(1)

102.361

3070.83

87.557

7880.13

150

85.9763

12896.445

300

83.96

25188

600

81.9436

49166.16

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