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IXTQ96N20P

  • IXTQ96N20P
  • IXTQ96N20P
IXTQ96N20P
Mosfets
IXYS
N-Channel 200 V
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Tube
0
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TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:200V
Drain-Source On Resistance-Max:24mΩ
Rated Power Dissipation:600|W
Qg Gate Charge:145nC
Package Style: TO-3P
Mounting Method:Through Hole
: 0

30

102.361

3070.83

90

87.557

7880.13

150

85.9763

12896.445

300

83.96

25188

600

81.9436

49166.16

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