IXTR170P10P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTR170P10P


：	IXTR170P10P
：	Mosfets
：	IXYS
：	P-Channel 100 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	P-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	13mΩ
Rated Power Dissipation:	312\|W
Qg Gate Charge:	240nC
Package Style:	ISOPLUS-247
Mounting Method:	Through Hole

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