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IXTT10P60

  • IXTT10P60
  • IXTT10P60
IXTT10P60
Mosfets
IXYS
Single P-Channe
-
Tube
-
TYPEDESCRIPTION
Fet Type:P-Ch
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:
Rated Power Dissipation:300|W
Qg Gate Charge:160nC
Package Style: TO-268 (D3PAK)
Mounting Method:Surface Mount
PDF(1)

30

259.9353

7798.059

60

216.5164

12990.984

90

212.6356

19137.204

150

207.8834

31182.51

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