IXTT10P60 Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTT10P60


：	IXTT10P60
：	Mosfets
：	IXYS
：	Single P-Channe
：	-
：	Tube
：	0
：	-
：

TYPE	DESCRIPTION
Fet Type:	P-Ch
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	1Ω
Rated Power Dissipation:	300\|W
Qg Gate Charge:	160nC
Package Style:	TO-268 (D3PAK)
Mounting Method:	Surface Mount

: 0

259.9353

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12990.984

212.6356

19137.204

150

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