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IXTT110N10L2

  • IXTT110N10L2
  • IXTT110N10L2
IXTT110N10L2
Mosfets
IXYS
N-Channel 100 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:100V
Drain-Source On Resistance-Max:18mΩ
Rated Power Dissipation:600W
Qg Gate Charge:260nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:110A
Turn-on Delay Time:28ns
Turn-off Delay Time:99ns
Rise Time:130ns
Fall Time:24ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:4.5V
Input Capacitance:10.5nF
Package Style: TO-268 (D3PAK)
Mounting Method:Surface Mount
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