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IXTT11P50

  • IXTT11P50
  • IXTT11P50
IXTT11P50
Mosfets
IXYS
Single P-Channe
-
Tube
-
TYPEDESCRIPTION
Fet Type:P-Ch
Drain-to-Source Voltage [Vdss]:500V
Drain-Source On Resistance-Max:0.75Ω
Rated Power Dissipation:300|W
Qg Gate Charge:130nC
Package Style: TO-268 (D3PAK)
Mounting Method:Surface Mount
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32885.825

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