IXTT16P60P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTT16P60P


：	IXTT16P60P
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	0
：	-
：

TYPE	DESCRIPTION
Fet Type:	P-Ch
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	720mΩ
Rated Power Dissipation:	460\|W
Qg Gate Charge:	92nC
Package Style:	TO-268 (D3PAK)
Mounting Method:	Surface Mount

: 0

159.7225

4791.675

135.5761

12201.849

120

134.1372

16096.464

300

129.6788

38903.64

450

127.8043

57511.935

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