IXTT170N10P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTT170N10P


：	IXTT170N10P
：	Mosfets
：	IXYS
：	N-Channel 100 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	9mΩ
Rated Power Dissipation:	715\|W
Qg Gate Charge:	198nC
Package Style:	TO-268 (D3PAK)
Mounting Method:	Surface Mount

PDF(1)

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