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IXTT6N120

  • IXTT6N120
  • IXTT6N120
IXTT6N120
Mosfets
IXYS
Single N-Channe
-
Tube
0
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:1200V
Drain-Source On Resistance-Max:2.6mΩ
Rated Power Dissipation:300|W
Qg Gate Charge:56nC
Package Style: TO-268 (D3PAK)
Mounting Method:Surface Mount
: 0

30

163.1777

4895.331

90

138.4437

12459.933

120

137.0049

16440.588

300

132.5565

39766.95

450

130.5402

58743.09

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